Simulation and optimization of current generation in gallium phosphide nanowire betavoltaic devices

The geometry of a gallium phosphide nanowire (NW) array has been optimized for maximum current generation in a betavoltaic (BV) device. The energy capture efficiency for various device geometries with different radioisotope source compounds was calculated in GEANT4. A validation of GEANT4 for BV device simulation was performed by comparing a model output with the available bulk semiconductor BV performance data, followed by predictions of the performance of NW-based devices. The pitch and the diameter of the NWs were found to have the most significant impact on the β-generated current density, with the optimum diameter-to-pitch ratios ranging from 0.55 to 0.8, depending on the source. The energy capture efficiency improved when low energy beta (β) emitters were used. For devices utilizing 63Ni source compounds, the β-generated current densities approached 0.95 μA cm−2, representing an improvement by a factor as high as 5.8 compared to planar devices. In the case of 3H source compounds, the generated current density was 3.05 μA cm−2, a factor of 15.5 larger than comparable planar devices. However, NW devices utilizing sources with a higher decay energy, such as 147Pm, did not demonstrate any improvements over planar geometries. Using the results for optimum NW geometries, NW-based or other nanostructured devices could be made to surpass the present commercial BV batteries.