Numerical model for degenerate and heterostructure semiconductor devices

A one-dimensional finite-difference numerical model appropriate for devices which require degenerate statistics to describe the carrier concentrations is reported. The Joyce–Dixon approximations [Appl. Phys. Lett. 31, 354 (1977)] to Fermi–Dirac statistics were used and found to be efficient and accurate methods to determine carrier concentrations, to calculate derivatives required in the iterative solution of the equations in the numerical …