Study of the cracking of highly porous p + type silicon during drying

The origin of the cracking of highly porous silicon layers during drying is investigated. Optical and scanning electron microscopy observation allow us to observe the cracking occurrence. In situ x-ray diffraction experiments, under controlled vapor pressure of pentane, reveal that large capillary stresses occur at a vapor pressure P* during the controlled drying. These stresses lead to the cracking of the highly porous layer, which occurs for …