ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film Journal Articles uri icon

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abstract

  • A ZnO thin-film transistor (TFT) with a channel layer formed via aqueous solution-growth at low temperature is demonstrated. This ZnO thin-film semiconductor has a well-controlled crystalline form, exhibiting n-channel, enhancement-mode behavior with a channel mobility as large as 0.56 cm2 V−1 s−1. Low-cost, superior transistor characteristics and low-temperature processing makes ZnO TFT attractive for flexible electronics on temperature sensitive substrates.

authors

  • Li, Chensha
  • Li, Yuning
  • Wu, Yiliang
  • Ong, Beng S
  • Loutfy, Rafik O

publication date

  • October 1, 2007