ZnO field-effect transistors prepared by aqueous solution-growth ZnO crystal thin film

A ZnO thin-film transistor (TFT) with a channel layer formed via aqueous solution-growth at low temperature is demonstrated. This ZnO thin-film semiconductor has a well-controlled crystalline form, exhibiting n-channel, enhancement-mode behavior with a channel mobility as large as 0.56 cm2 V−1 s−1. Low-cost, superior transistor characteristics and low-temperature processing makes ZnO TFT attractive for flexible electronics on temperature sensitive substrates.