Journal article
Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers
Abstract
Quantitative compositional analysis of InAs quantum wires deposited between In0.53Ga0.37Al0.1As barrier layers grown on InP substrates was performed by electron energy loss spectrometry and energy dispersive x-ray spectrometry. An indium-rich region in the center of the wire, with decreasing indium concentration toward the interface with the barrier layers, was observed from indium concentration maps for individual quantum wires. “Stripelike” …
Authors
Cui K; Robertson MD; Robinson BJ; Andrei CM; Thompson DA; Botton GA
Journal
Journal of Applied Physics, Vol. 105, No. 9,
Publisher
AIP Publishing
Publication Date
May 1, 2009
DOI
10.1063/1.3122596
ISSN
0021-8979