Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors

Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the other hand, are characterized by significant generation-recombination noise contributions to the …