A new 1/ f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation

A new 1/f noise model for metal-oxide-semiconductor field-effect transistors (MOSFETs) in saturation and deep saturation based on the Hooge’s mobility fluctuation (MF) noise expression is presented. The new model uses detailed one-dimensional expressions of carrier number per unit length n(x) and channel potential V(x) varying with channel position x to calculate the gate referred noise spectral density SVG(f) in both saturation and deep …