Experts has a new look! Let us know what you think of the updates.

Provide feedback
Home
Scholarly Works
Analytical model of surface depletion in GaAs...
Journal article

Analytical model of surface depletion in GaAs nanowires

Abstract

Poisson's equation is solved to provide a comprehensive model of nanowire (NW) surface depletion as a function of interface state density, NW radius, and doping density. This model improves upon established theory by giving distinct solutions to the cases of full and partial NW depletion while implementing the charge neutrality level and accurate Fermi-Dirac statistics. To explain the underlying physics, key parameters were plotted as a …

Authors

Chia ACE; LaPierre RR

Journal

Journal of Applied Physics, Vol. 112, No. 6,

Publisher

AIP Publishing

Publication Date

September 15, 2012

DOI

10.1063/1.4752873

ISSN

0021-8979