Characterization of the electro-optical behavior of Zn2Si0.5Ge0.5O4:Mn thin-film electroluminescent devices Journal Articles uri icon

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abstract

  • Zn 2 Si 0.5 Ge 0.5 O 4 : Mn was investigated as a green-emitting oxide phosphor for thin-film electroluminescent (EL) display applications. Detailed electro-optical characteristics of thin-film EL devices with SrTiO3 dielectrics on a glass substrate (TFEL) and EL devices with a single ceramic insulator (CIEL) have been analyzed. The steeper brightness–voltage dependency of the TFEL device is ascribed to the capability to provide high current densities and efficient light generation for both voltage polarities. The CIEL device on the other hand suffered from asymmetrical behavior, related with the lack of a top dielectric. It was found that the use of high-permittivity dielectrics in the TFEL device results in a small voltage drop over the insulating layers, enhancing the amount of charge transferred through the phosphor. Transient charge–voltage (αQp–V) measurements on the TFEL device evidence that a high positive space charge density of ∼0.68 μC/cm2 is present in the oxide phosphor during steady-state operation. In addition, the transient behavior after ultraviolet illumination indicates the presence of shallow electron traps in the phosphor, giving rise to a conductive current flow at electric fields below the threshold.

publication date

  • April 15, 2003