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Contact effects and extraction of intrinsic...
Journal article

Contact effects and extraction of intrinsic parameters in poly(3-alkylthiophene) thin film field-effect transistors

Abstract

We report on contact effects in polymeric thin film transistors based on poly(3-octylthiophene) and poly(3-hexadecylthiophene) with gold contact electrodes and in the bottom contact configuration. A method to extract the intrinsic channel mobility from the measured extrinsic mobility over a broad range of gate voltage is presented. This method uses the I-V characteristics of the transistor in its reverse mode operation. The results show that …

Authors

Deen MJ; Kazemeini MH; Holdcroft S

Journal

Journal of Applied Physics, Vol. 103, No. 12,

Publisher

AIP Publishing

Publication Date

June 15, 2008

DOI

10.1063/1.2942400

ISSN

0021-8979