Journal article
Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy
Abstract
Hydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the …
Authors
Sidhu LS; Zukotynski S; Kruzelecky RV; Thompson DA
Journal
Journal of Applied Physics, Vol. 77, No. 7, pp. 3378–3381
Publisher
AIP Publishing
Publication Date
April 1, 1995
DOI
10.1063/1.358626
ISSN
0021-8979