Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy

Hydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the bonded hydrogen from the samples. However, this resulted in relatively little change in either the room-temperature free-carrier concentration or Hall mobility.