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Luminescence properties of Ce3+ and Tb3+ co-doped...
Journal article

Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts

Abstract

In this work, the role of the nitrogen content, the annealing temperature, and the sample morphology on the luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films has been investigated. An increasing nitrogen atomic percentage has been incorporated in the host matrix by gradually replacing oxygen with nitrogen during fabrication while maintaining the Si content unaltered, obtaining a sequential variation in the film composition …

Authors

Ramírez JM; Ruiz-Caridad A; Wojcik J; Gutierrez AM; Estradé S; Peiró F; Sanchís P; Mascher P; Garrido B

Journal

Journal of Applied Physics, Vol. 119, No. 11,

Publisher

AIP Publishing

Publication Date

March 21, 2016

DOI

10.1063/1.4944433

ISSN

0021-8979