Effect of annealing on the defect structure in a-SiC:H films Journal Articles uri icon

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abstract

  • The annealing behavior of amorphous, hydrogenated silicon carbide films in the range 400–900 °C was studied by optical characterization methods, 15N hydrogen profiling, and defect profiling using a variable energy positron beam. The films were deposited in an electron cyclotron resonance chemical vapor deposition system using ditertiary butyl silane [SiH2(C4H9)2] as the monosource for silicon and carbon. As-deposited films were found to contain large concentrations of hydrogen, both bonded and unbonded. Under rapid thermal annealing in a N2 atmosphere, the bonded hydrogen effuses giving rise to additional Si–C bond formation and to film densification. After annealing at high temperatures in N2, a marked decrease in the total hydrogen content is observed. After annealing in vacuum, however, the hydrogen effusion promotes void formation in the films.

authors

  • Friessnegg, T
  • Boudreau, M
  • Brown, J
  • Mascher, Peter
  • Simpson, PJ
  • Puff, W

publication date

  • August 15, 1996