Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H‐SiC mesas

The impetus for dislocation motion in thin films is generally understood in terms of Peach-Koehler forces. For the case of III-nitride films grown on step-free 4H-SiC mesas, however, it is the gradient of the strain energy from the mesa edge that is capable of driving misfit dislocations. Using the strain profile as a function of the distance from the mesa edge and the line tension of the c-plane threading arms, we have calculated the excess …