Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures
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Overview
status
publication date
- January 15, 1997
has subject area
- 01 Mathematical Sciences (FoR)
- 02 Physical Sciences (FoR)
- 09 Engineering (FoR)
- Applied Physics (Science Metrix)
published in
- Journal of Applied Physics Journal