Journal article
Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction
Abstract
We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. …
Authors
Darbandi A; Salehzadeh O; Kuyanov P; LaPierre RR; Watkins SP
Journal
Journal of Applied Physics, Vol. 115, No. 23,
Publisher
AIP Publishing
Publication Date
June 21, 2014
DOI
10.1063/1.4883960
ISSN
0021-8979