Compact modeling of charge carrier mobility in organic thin-film transistors
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abstract
Finding the common points in theoretical models for mobility in thin-film transistors (TFTs), we demonstrate that there exists a generic analytical model for the mobility in organic TFTs (OTFTs), and the generic model is then converted into a TFT Compact Mobility Model, which is physically derivable from one perspective, and properly arranged to be suitable for compact modeling of OTFTs from another perspective, by separation and proper interfacing of temperature and bias dependence of the mobility, both significant for OTFTs, with the compact models for electrical current in OTFT. The proposed TFT Compact Mobility Model is verified theoretically and against experimental data, and the model is applicable even for high temperatures T>To, above the characteristic temperature To of the distribution of states in the organic material, a condition at which other models diverge in principle. The improvement is achieved by the identification of a temperature “shaping” function, which contains a diverging function when derived theoretically elsewhere at idealized assumptions, and we suggest an approach to remedy the problem, since divergence in characteristic equations of compact models is not allowed. However, an open question remains for the bias enhancement in mobility at high temperatures, for which case no physical model is available at present. Another essential practical feature of the TFT Compact Mobility Model is that the model is both upgradable and reducible, allowing for easier implementation, modifications and independence of characterization techniques, enabling a systematic fitting of experimental data with large scattering in the values, which is the case for OTFT nowadays.
