Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap
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Overview
status
publication date
- July 15, 2006
has subject area
- 01 Mathematical Sciences (FoR)
- 02 Physical Sciences (FoR)
- 09 Engineering (FoR)
- Applied Physics (Science Metrix)
published in
- Journal of Applied Physics Journal