Anisotropic interfacial strain in InP/InGaAs/InP quantum wells Journal Articles uri icon

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abstract

  • Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga–P, Ga–As, and In–As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells.

publication date

  • November 15, 1998