Trapped charge dynamics in InAs nanowires
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We study random telegraph noise in the conductance of InAs nanowire
field-effect transistors due to single electron trapping in defects. The
electron capture and emission times are measured as functions of temperature
and gate voltage for individual traps, and are consistent with traps residing
in the few-nanometer-thick native oxide, with a Coulomb barrier to trapping.
These results suggest that oxide removal from the nanowire surface, with proper
passivation to prevent regrowth, should lead to the reduction or elimination of
random telegraph noise, an important obstacle for sensitive experiments at the
single electron level.
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