Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells

Numerical simulation of current-voltage (J-V) characteristics of III-V nanowire core-shell p-n junction diodes under illuminated conditions is presented with an emphasis on optimizing the nanowire design for photoconversion efficiency. Surface recombination and depletion effects are found to play a dominant role in the J-V characteristics. The impact of surface charge density, surface recombination velocity, doping concentration, and nanowire geometry are investigated. Investigation of contacting methodology indicated that solar cell efficiency is degraded with electrical contacts on the sidewalls of the nanowire due to Fermi level pinning at the metal/semiconductor interface. On the other hand, contacts on the top of nanowires with sidewall passivation provide solar cell performance close to the detailed balance efficiency limit of ∼30%. Elimination of the thin film between nanowires produces a smaller dark current and improved cell performance.