Journal article
The role of proximity caps during the annealing of UV-ozone oxidized GaAs
Abstract
This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of …
Authors
Ghosh SC; Biesinger MC; LaPierre RR; Kruse P
Journal
Journal of Applied Physics, Vol. 101, No. 11,
Publisher
AIP Publishing
Publication Date
June 1, 2007
DOI
10.1063/1.2740359
ISSN
0021-8979