Journal article
Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]
Authors
Mooney PM; Watkins KP; Jiang Z; Basile AF; Lewis RB; Bahrami-Yekta V; Masnadi-Shirazi M; Beaton DA; Tiedje T
Journal
Journal of Applied Physics, Vol. 117, No. 1,
Publisher
AIP Publishing
Publication Date
January 7, 2015
DOI
10.1063/1.4905390
ISSN
0021-8979