Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy Journal Articles uri icon

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abstract

  • We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700 °C.

publication date

  • March 15, 1998