Journal article
Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy
Abstract
We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700 °C.
Authors
Kang JU; Frankel MY; Esman RD; Thompson DA; Robinson BJ
Journal
Journal of Applied Physics, Vol. 83, No. 6, pp. 3423–3425
Publisher
AIP Publishing
Publication Date
March 15, 1998
DOI
10.1063/1.367110
ISSN
0021-8979