Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

The influence of carbon concentration on the low-frequency noise (LF noise) of Si∕SiGe:C∕Si heterojunction bipolar transistors (HBTs) is investigated. When carbon is incorporated into these HBTs, representative noise spectra of the input current spectral density SIB show significant generation-recombination (GR) components. On the other hand, for transistors without carbon incorporation, no GR components were observed. When only 1∕f noise …