Electron and hole scattering in short-period InGaAs/InP superlattices Journal Articles uri icon

  •  
  • Overview
  •  
  • Research
  •  
  • Identity
  •  
  • Additional Document Info
  •  
  • View All
  •  

abstract

  • The combination of photoluminescence and magneto-transport measurements is used to study the single-particle relaxation time and the transport scattering time in short-period InGaAs/InP superlattices. Both the single-particle relaxation times of the electrons and of the holes were obtained in the same samples and were shown to be determined by the remote-impurity scattering. The transport scattering time for electrons was found to be dominated by the interface-roughness scattering with lateral length Λ=10 nm and height Δ = 0.13 nm. We also discuss the importance of multiple-scattering effects for small well widths and of alloy scattering for large well widths.

publication date

  • October 1, 2011