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Decoupling recombination mechanisms and trap state...
Journal article

Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

Abstract

In this work, we show that extraction of the true bulk lifetime from the biexponential decay that follows from low initial carrier density photoluminescence decay experiments is not generally possible, and introduce new models to enable extraction of the bulk lifetime in the case where the initial carrier density exceeds the doping level. From measurements with high initial carrier density, we establish quasi-equilibrium between localized and …

Authors

Gerber MW; Kleiman RN

Journal

Journal of Applied Physics, Vol. 122, No. 9,

Publisher

AIP Publishing

Publication Date

September 7, 2017

DOI

10.1063/1.5001128

ISSN

0021-8979