Journal article
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells
Abstract
The electron transport and recombination processes of photoexcited electron-hole pairs were studied in InGaAs/InP single quantum wells. Comprehensive transport data analysis reveals a asymmetric shape of the quantum well potential where the electron mobility was found to be dominated by interface-roughness scattering. The low-temperature time-resolved photoluminescence was employed to investigate recombination kinetics of photogenerated …
Authors
Tito MA; Pusep YA; Gold A; Teodoro MD; Marques GE; LaPierre RR
Journal
Journal of Applied Physics, Vol. 119, No. 9,
Publisher
AIP Publishing
Publication Date
March 7, 2016
DOI
10.1063/1.4942854
ISSN
0021-8979