Applied Physics Letters
Journal
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Overview
publication venue for
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Advancing the reliability of thermoelectric materials: A case study of silicides through statistics.
119.
2021
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Mechanical strain mapping of GaAs based VCSELs.
118.
2021
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Perspective on the role of the physical properties of membranes in neurodegenerative and infectious diseases.
117.
2020
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Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy.
116.
2020
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Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion.
115.
2019
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Two-photon absorption induced nanowelding for assembling ZnO nanowires with enhanced photoelectrical properties.
115.
2019
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Spatially dispersive dichroism in bianisotropic metamirrors.
113.
2018
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Increased yield of MoS2 monolayer exfoliation through the bimetallic corrosion of aluminum.
113.
2018
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Altering thermal transport by strained-layer epitaxy.
112.
2018
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Phosphorus oxide gate dielectric for black phosphorus field effect transistors.
112.
2018
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Fabrication of phonon-based metamaterial structures using focused ion beam patterning.
112.
2018
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Athermal synchronization of laser source with WDM filter in a silicon photonics platform.
110:211105.
2017
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Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1−xAs core/multishell nanowires.
109.
2016
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Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units.
108.
2016
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Individual heteroatom identification with X-ray spectroscopy.
108.
2016
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Achieving thermal rectification in designed liquid-liquid systems.
108.
2016
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Evidence for an equilibrium epitaxial complexion at the Au-MgAl2O4 interface.
107.
2015
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Single-mode Fabry-Perot laser with deeply etched slanted double trenches.
107.
2015
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Symmetry plays a key role in the erasing of patterned surface features.
107.
2015
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An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band.
107.
2015
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Size-dependent mechanical properties of Mg nanoparticles used for hydrogen storage.
106.
2015
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A carbon nanotube based resettable sensor for measuring free chlorine in drinking water.
106.
2015
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Atomic structure and bonding of the interfacial bilayer between Au nanoparticles and epitaxially regrown MgAl2O4 substrates.
105.
2014
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Multi-spectral optical absorption in substrate-free nanowire arrays.
105.
2014
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Gallium loading of gold seed for high yield of patterned GaAs nanowires.
105.
2014
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Benchtop fabrication of multi-scale micro-electromagnets for capturing magnetic particles.
105.
2014
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Influence of the bonding front propagation on the wafer stack curvature.
105.
2014
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Junction capacitance and donor-acceptor interface of organic photovoltaics.
105.
2014
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Structure and physical properties of EuTa2O6 tungsten bronze polymorph.
105.
2014
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Lattice distortions and octahedral rotations in epitaxially strained LaNiO3/LaAlO3 superlattices.
104.
2014
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Dynamic rectification in a thermal diode based on fluid-solid interfaces: Contrasting behavior of soft materials and fluids.
104.
2014
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Abnormal thermal conductivity in tetragonal tungsten bronze Ba6−xSrxNb10O30.
104.
2014
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X-ray nano-diffraction study of Sr intermetallic phase during solidification of Al-Si hypoeutectic alloy.
104.
2014
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Hybrid nano ridge plasmonic polaritons waveguides.
103.
2013
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Investigation of electrically induced migration of copper on graphene surfaces: Theory and experiments.
103.
2013
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Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure.
103.
2013
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Attenuation of superconductivity in manganite/cuprate heterostructures by epitaxially-induced CuO intergrowths.
103.
2013
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High efficient white organic light-emitting diodes with single emissive layer using phosphorescent red, green, and blue dopants.
103.
2013
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Direct silicon bonding dynamics: A coupled fluid/structure analysis.
103.
2013
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A thermal logic device based on fluid-solid interfaces.
102.
2013
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Phonon transport in an initially twisted polyvinyl acetate nanofiber.
102.
2013
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Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths.
102.
2013
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Observing and modeling light propagation in polymer films.
102:143302-143302.
2013
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Tilted epitaxy on (211)-oriented substrates.
102.
2013
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Highly localized heat generation by femtosecond laser induced plasmon excitation in Ag nanowires.
102.
2013
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Negative dielectric constant manifested by static electricity.
102.
2013
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Electron transport in InAs-InAlAs core-shell nanowires.
102.
2013
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Reducing thermal transport in electrically conducting polymers: Effects of ordered mixing of polymer chains.
102.
2013
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Effects of Be doping on InP nanowire growth mechanisms.
101.
2012
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Investigation of the thermal charge “trapping-detrapping” in silicon nanocrystals: Correlation of the optical properties with complex impedance spectra.
101.
2012
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TiO2 nanofibrous interface development for Raman detection of environmental pollutants.
101.
2012
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Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy.
101:082112-082112.
2012
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Solution processed LiF anode modification for polymer solar cells.
100.
2012
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Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires.
100.
2012
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Thermal rectification in a fluid reservoir.
100.
2012
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Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes.
100:051105-051105.
2012
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Manipulating the size distribution of supported gold nanostructures.
100.
2012
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Structure and chemistry of the Si(111)/AlN interface.
100.
2012
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Atomic scale electron vortices for nanoresearch.
99.
2011
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Organic photovoltaic power conversion efficiency improved by AC electric field alignment during fabrication.
99.
2011
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Heat conduction across a solid-solid interface: Understanding nanoscale interfacial effects on thermal resistance.
99.
2011
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A simple parallel tandem organic solar cell based on metallophthalocyanines.
98.
2011
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Luminescence dynamics in Ga(AsBi).
98.
2011
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Robust properties of the superconducting ferromagnet UCoGe.
98.
2011
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Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy.
98.
2011
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Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy.
97.
2010
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Low temperature sintering of Ag nanoparticles for flexible electronics packaging.
97.
2010
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Magnified hard x-ray image in one dimension.
96.
2010
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Behavior of Caenorhabditis elegans in alternating electric field and its application to their localization and control.
96.
2010
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Clustering effects in Ga(AsBi).
96.
2010
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A study of disorder effects in random (AlxGa1−xAs)n(AlyGa1−yAs)m superlattices embedded in a wide parabolic potential.
96.
2010
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Characterization of the junction capacitance of metal-semiconductor carbon nanotube Schottky contacts.
96.
2010
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Locating La atoms in epitaxial Bi3.25La0.75Ti3O12 films through atomic resolution electron energy loss spectroscopy mapping.
95.
2009
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Integrated nanostructures for direct detection of DNA at attomolar concentrations.
95.
2009
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Thermal transport through superlattice solid-solid interfaces.
95.
2009
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Composition dependence of photoluminescence of GaAs1−xBix alloys.
95.
2009
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Seeing structures and measuring properties with transmission electron microscopy images: A simple combination to study size effects in nanoparticle systems.
94.
2009
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Inkjet printing narrow electrodes with <50 μm line width and channel length for organic thin-film transistors.
94.
2009
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The formation of light emitting cerium silicates in cerium-doped silicon oxides.
94.
2009
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Interface roughness in short-period InGaAs∕InP superlattices.
93.
2008
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Structural and transport properties of epitaxial niobium-doped BaTiO3 films.
93.
2008
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Fluorescence correlation spectroscopy with sub-diffraction-limited resolution using near-field optical probes.
93.
2008
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Detaching speed of a fibrillar interface.
93.
2008
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An experimental study of the interactions of self-trapped white light beams in a photopolymer.
93:051111.
2008
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Resonant tunneling as a dominant transport mechanism in n-GaAs∕p-GaAs tunnel diodes.
92.
2008
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Molecular simulation of the carbon nanotube growth mode during catalytic synthesis.
92.
2008
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Cross-sectional study of periodic surface structures on gallium phosphide induced by ultrashort laser pulse irradiation.
92.
2008
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Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix.
92.
2008
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Thermal transport across nanoscale solid-fluid interfaces.
92.
2008
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Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes.
91.
2007
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Diffusion study in tailored gratings recorded in photopolymer glass with high refractive index species.
91.
2007
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Periodic surface structures on gallium phosphide after irradiation with 150fs–7ns laser pulses at 800nm.
91.
2007
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Fabrication of nanoscale single crystal InP membranes.
91.
2007
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Spectral dependence of the photoluminescence decay in disordered semiconductors.
91.
2007
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Improved GaN materials and devices through confined epitaxy.
90.
2007
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Organic thin-film transistor integration using silicon nitride gate dielectric.
90.
2007
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Charge injection at interfaces between molecularly doped polymer thin films.
90.
2007
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Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy.
90.
2007
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Evolution of wurtzite CdTe through the formation of cluster assembled films.
89.
2006
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Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy.
89.
2006
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Electric-field-induced fluorescence quenching in dye-doped tris(8-hydroxyquinoline) aluminum layers.
89.
2006
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Improving the stability of organic light-emitting devices by using a thin Mg anode buffer layer.
89.
2006
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Scanning transmission x-ray microscopy of isolated multiwall carbon nanotubes.
89.
2006
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Quantitative analysis of compositional changes in InGaAs∕InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer.
89.
2006
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Wavelength and temperature dependence of photorefractive effect in quasi-phase-matched LiNbO3 waveguides.
89.
2006
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Room temperature bonding of silicon and lithium niobate.
89.
2006
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Organic thin-film transistors with poly(methyl silsesquioxane) modified dielectric interfaces.
89.
2006
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Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas.
88:263509.
2006
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Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence.
88.
2006
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Purely gain-coupled distributed feedback laser via a bright optical lattice.
88.
2006
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Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy.
88.
2006
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Effects of humidity on unencapsulated poly(thiophene) thin-film transistors.
88:113514.
2006
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Charge transport across pressure-laminated thin films of molecularly doped polymers.
88.
2006
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Light emission from Si nanoclusters formed at low temperatures.
88.
2006
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Nanoanalytical quantification of the nitrogen content in Ga(NAs)∕GaAs by using transmission electron microscopy in combination with refined structure factor calculation.
88.
2006
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Scaling of domain size during spinodal decomposition: Dislocation discreteness and mobility effects.
87.
2005
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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates.
87:1-3.
2005
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H-sensitive radiative recombination path in Si nanoclusters embedded in SiO2.
87.
2005
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Erratum: “Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys” [Appl. Phys. Lett. 85, 5908 (2004)].
87.
2005
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Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550nm.
86.
2005
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Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors.
86.
2005
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Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy.
86.
2005
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Passivation effect of Al∕LiF electrode on C60 diodes.
86.
2005
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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces.
86:021902.
2005
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Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys.
85:5908-5910.
2004
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All jet-printed polymer thin-film transistor active-matrix backplanes.
85:3304-3306.
2004
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Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates.
84:5216-5218.
2004
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Scanning tunneling spectroscopy under pulsed spin injection.
84:1907-1909.
2004
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Nanoscale-twinning-induced strengthening in austenitic stainless steel thin films.
84:1096-1098.
2004
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High pressure saturation of hydrogen stored by single-wall carbon nanotubes.
84:918-920.
2004
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Imaging the strain fields resulting from laser micromachining of semiconductors.
83:225-227.
2003
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Reduced reflectance cathode for organic light-emitting devices using metalorganic mixtures.
83:186-188.
2003
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Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses.
82:4462-4464.
2003
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Detwinning YBa2Cu3O7−δ thin films.
82:3728-3730.
2003
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“Gentle lithography” with benzene on Si(100).
81:4422-4424.
2002
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Control over exciton confinement versus separation in composite films of polyfluorene and CdSe nanocrystals.
81:3446-3448.
2002
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Chemical structure of Al/LiF/Alq interfaces in organic light-emitting diodes.
81:3173-3175.
2002
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Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser.
81:2502-2504.
2002
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Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements.
81:1323-1325.
2002
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Metal/AlQ
3
interface structures.
81:766-768.
2002
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Organic light emitting devices with enhanced operational stability at elevated temperatures.
81:370-372.
2002
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Study of organic light emitting devices with a 5,6,11,12-tetraphenylnaphthacene (rubrene)-doped hole transport layer.
80:2180-2182.
2002
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Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.
80:947-949.
2002
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Spatial variation of electrical properties in lateral epitaxially overgrown GaN.
79:761-763.
2001
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Image capture array with an organic light sensor.
78:4193-4195.
2001
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Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP.
78:3199-3201.
2001
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Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy.
78:1694-1696.
2001
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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes.
78:1685-1687.
2001
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A photopolymerizable glass with diffraction efficiency near 100% for holographic storage.
78:1490-1492.
2001
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Nature of the highly conducting interfacial layer in GaN films.
77:2873-2875.
2000
-
Investigation of the sites of dark spots in organic light-emitting devices.
77:2650-2652.
2000
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Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm.
77:2271-2273.
2000
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Low-frequency noise in cadmium-selenide thin-film transistors.
77:2234-2236.
2000
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Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon.
77:1976-1978.
2000
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Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy.
77:913-915.
2000
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Metal–insulator–semiconductor tunneling microscope: two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy.
77:456-458.
2000
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Imaging of acoustic fields in bulk acoustic-wave thin-film resonators.
77:136-138.
2000
-
Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design.
76:2791-2793.
2000
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Simple and convenient nonoptical shear force sensor for shear force and near-field optical microscopes.
75:2731-2733.
1999
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Local microstructures of Si in GaN studied by x-ray absorption spectroscopy.
75:534-536.
1999
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The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy.
75:466-468.
1999
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Electrical simulation of scanning capacitance microscopy imaging of the pn junction with semiconductor probe tips.
74:3672-3674.
1999
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High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides.
74:3311-3313.
1999
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Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters.
74:1933-1935.
1999
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Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels.
74:1848-1850.
1999
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Intrinsic picosecond response times of Y–Ba–Cu–O superconducting photodetectors.
74:853-855.
1999
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Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells.
74:744-746.
1999
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Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation.
74:272-274.
1999
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A photonic switch based on a gigantic, reversible optical nonlinearity of liquefying gallium.
73:1787-1789.
1998
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Open-volume defect tails in Ge-implanted Si probed by slow positrons.
73:1373-1375.
1998
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Recover the phases from intensity data of x-ray diffraction.
73:909-911.
1998
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Thin film electroluminescence in highly anisotropic oxide materials.
72:3356-3358.
1998
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Degradation processes at the cathode/organic interface in organic light emitting devices with Mg:Ag cathodes.
72:2642-2644.
1998
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InGaAsP grown by He-plasma-assisted molecular beam epitaxy for 1.55 μm high speed photodetectors.
72:1278-1280.
1998
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Humidity-induced crystallization of tris (8-hydroxyquinoline) aluminum layers in organic light-emitting devices.
72:756-758.
1998
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Solution to the bistability problem in shear force distance regulation encountered in scanning force and near-field optical microscopes.
71:2541-2543.
1997
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Observation of body centered cubic Cu in Cu/Nb nanolayered composites.
71:2103-2105.
1997
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Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy.
71:1513-1515.
1997
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Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure.
70:3419-3421.
1997
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Device length dependence of optical second-harmonic generation in AlGaAs quasiphase matched waveguides.
70:1554-1556.
1997
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Chemical information in positron annihilation spectra.
69:3333-3335.
1996
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Second-harmonic generation using a fiber ring resonator with a LiNbO3 waveguide and a semiconductor optical amplifier.
69:2154-2156.
1996
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He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials.
69:509-511.
1996
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Atomic resolution x-ray hologram.
68:1901-1903.
1996
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Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide.
68:1939-1941.
1996
-
Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films.
68:559-561.
1996
-
Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide.
1939.
1995
-
Inhibition of superconductivity in YBaCuO films by aluminum ion implantation.
67:2717-2719.
1995
-
InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls.
67:2358-2360.
1995
-
Electro-optic sampling of 1.5-ps photoresponse signal from YBa2Cu3O7−δ thin films.
67:285-287.
1995
-
Low-temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors.
66:2664-2666.
1995
-
Current–voltage characteristics of dc voltage biased high temperature superconducting microbridges.
66:2576-2578.
1995
-
Helium bubbles in silicon: Structure and optical properties.
66:1319-1321.
1995
-
Room temperature electron cyclotron resonance chemical vapor deposition of high quality TiN.
66:302-304.
1995
-
Current-voltage characteristics of dc voltage biased high temperature superconducting microbridges.
66:3307.
1995
-
Response to ‘‘Comment on ‘Steric variation of the cerium valence in Ce2Fe14B and related compounds’ ’’ [Appl. Phys. Lett. 63, 3642 (1993)].
65:3151-3152.
1994
-
Color changes in photoluminescence by doped, unconverted and partially converted poly(p-phenylene vinylene).
65:1877-1879.
1994
-
Experimental study of implantation-induced disordering in InGaAsP strained multiple-quantum-well heterostructures.
65:1239-1241.
1994
-
Picosecond photoresponse of epitaxial YBa2Cu3O7−δ thin films.
64:3172-3174.
1994
-
Large differences in Ti thermal diffusion caused domain inversion between undoped and MgO-doped LiNbO3.
64:2504-2506.
1994
-
1.5 μm band efficient broadband wavelength conversion by difference frequency generation in a periodically domain-inverted LiNbO3 channel waveguide.
63:3559-3561.
1993
-
Steric variation of the cerium valence in Ce2Fe14B and related compounds.
63:3642-3644.
1993
-
Dislocation relaxation in InAsyP1−y films deposited onto (001) InP by gas-source molecular beam epitaxy.
63:3194-3196.
1993
-
Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using tris(dimethylamino)silane.
63:3014-3016.
1993
-
High-resistivity regions in n-type InGaAsP produced by 4He+ ion bombardment at 80 and 300 K.
63:2126-2128.
1993
-
Wavelength conversions ∼1.5 μm by difference frequency generation in periodically domain-inverted LiNbO3 channel waveguides.
63:1170-1172.
1993
-
Observation of separate electron and hole escape rates in unbiased strained InGaAsP multiple quantum well laser structures.
62:2525-2527.
1993
-
Identification of nonbolometric photoresponse in YBa2Cu3O7−δ thin films based on magnetic field dependence.
62:1158-1160.
1993
-
Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure.
62:121-122.
1993
-
Temperature-dependence of the growth orientation of atomic layer growth MgO.
61:1450-1452.
1992
-
Observation of dislocation stresses in InP using polarization-resolved photoluminescence.
61:1174-1176.
1992
-
Growth of (Pb0.75Cu0.25)Sr2(Y1−yCay)Cu2O7 thin films by laser ablation.
59:2597-2599.
1991
-
Correlation of spectral output and below-threshold gain profile modulation in 1.3 μm semiconductor diode lasers.
59:1150-1152.
1991
-
Sm2Fe17Nx: Site and valence of the interstitial nitrogen.
58:1395-1397.
1991
-
In situ growth of PbSrYCaCuO films by laser ablation.
58:762-764.
1991
-
Semiconductor hot-electron alternating current cold cathode.
58:613-615.
1991
-
Solid phase epitaxial growth of amorphized InP.
58:487-489.
1991
-
Observation of Lomer–Cottrell locks in SiGe strained layers.
57:2220-2221.
1990
-
Effect of scattering on the longitudinal mode spectrum of 1.3 μm InGaAsP semiconductor diode lasers.
57:330-332.
1990
-
Is there a radar clutter attractor?.
56:593-595.
1990
-
Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation.
54:42-44.
1989
-
Determination of the atomic configuration at semiconductor interfaces.
50:1417-1419.
1987
-
Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals.
48:1805-1807.
1986
-
Microstructure, domain walls, and magnetization reversal in hot-pressed Nd-Fe-B magnets.
48:733-735.
1986
-
Electromagnetic acoustic transducers as wideband velocity sensors.
46:634-635.
1985
-
Consequences of a lower level population on the modeling of a homogeneously broadened injection laser.
44:489-491.
1984
-
Laser-induced periodic surface damage and radiation remnants.
41:261-264.
1982
-
Confinement of laser-generated carriers in semiconductors by induced lattice temperature gradients.
40:385-387.
1982
-
Electro-optical induction of recombination luminescence in an organic photoconductor.
39:662-664.
1981
-
4.3-μm cascade CO2 laser.
39:199-201.
1981
-
Visual observations of macroscopic inhomogeneous broadening of the R1 line in ruby.
37:510-512.
1980
-
Capacitance measurements on organic-semiconductor Schottky barriers—A new approach.
34:694-696.
1979
-
Nonlinear sputtering effects in thin metal films.
34:342-345.
1979
-
Channeling−effect study of deuteron−induced damage in Si and Ge crystals.
26:424-426.
1975
-
Rotational coupling and laser dynamics in TE CO2 lasers.
26:380-382.
1975
-
Transport and Structural Properties of VO2 Films.
20:93-95.
1972
-
ELECTROREFLECTANCE AND THERMOREFLECTANCE OF ZnSiAs2.
18:520-522.
1971
-
THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING.
14:102-103.
1969
-
EXPERIMENTAL EVIDENCE FOR INTERSTITIAL In AND Tl IN ION-IMPLANTED SILICON.
12:255-256.
1968
-
A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-III AND -V ELEMENTS IN Si AND Ge.
11:365-367.
1967
-
Erratum: Analysis of Sb-Implanted Silicon by (p, p) Scattering and Hall Measurements.
11:110-110.
1967
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ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS.
10:323-325.
1967
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TEMPERATURES, LORENTZIAN WIDTHS, AND DRIFT VELOCITIES IN THE ARGON-ION LASER.
8:214-216.
1966
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