Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy

Recombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer caused electrons and holes to be simultaneously released from different parts of this layer during an emission transient. The need to introduce modifications in the analytical expressions that determine the parameters of these centers by capacitance transient spectroscopy is demonstrated. A correction formula to determine concentrations of electron or hole traps or recombination centers is proposed.