Organic thin-film transistor integration using silicon nitride gate dielectric Journal Articles

abstract

• The impact of film composition of silicon nitride (SiNx) gate dielectrics on the electrical performance of organic thin-film transistors (OTFTs) was investigated. Polythiophene OTFTs with SiNx dielectric, prepared using a series of interface modification processes, exhibited effective mobility of 0.09cm2∕Vs and on/off current ratio of 107. Overall improvement in mobility, on/off current ratio, and gate leakage current was observed as silicon content in SiNx increases. The results demonstrate the viability of using SiNx for OTFTs. The low temperature processing and large area deposition capabilities of SiNx hold great promise for integration of OTFT circuits for large area flexible electronic applications.

authors

• Li, Flora M
• Nathan, Arokia
• Wu, Yiliang
• Ong, Beng S

status

• published 

publication date

• March 26, 2007

has subject area

• 02 Physical Sciences (FoR)
• 09 Engineering (FoR)
• 10 Technology (FoR)
• Applied Physics (Science Metrix)

published in

• Applied Physics Letters  Journal

keywords

• ELECTRONICS
• HIGH-PERFORMANCE
• POLYMERS
• Physical Sciences
• Physics
• Physics, Applied
• Science & Technology

Digital Object Identifier (DOI)

• 10.1063/1.2718505

volume

• 90

issue

• 13