Organic thin-film transistor integration using silicon nitride gate dielectric

The impact of film composition of silicon nitride (SiNx) gate dielectrics on the electrical performance of organic thin-film transistors (OTFTs) was investigated. Polythiophene OTFTs with SiNx dielectric, prepared using a series of interface modification processes, exhibited effective mobility of 0.09cm2∕Vs and on/off current ratio of 107. Overall improvement in mobility, on/off current ratio, and gate leakage current was observed as silicon …