Interface roughness in short-period InGaAs∕InP superlattices Journal Articles uri icon

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abstract

  • Electron mobility was studied in lattice-matched short-period InGaAs∕InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs∕InP and GaAs∕AlGaAs interfaces were compared. Much smoother InGaAs∕InP interfaces resulted in higher electron mobility limited by interface roughness.

publication date

  • December 15, 2008