Phosphorus oxide gate dielectric for black phosphorus field effect transistors Academic Article uri icon

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abstract

  • The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

authors

  • Dickerson, W
  • Tayari, V
  • Fakih, I
  • Korinek, A
  • Caporali, M
  • Serrano-Ruiz, M
  • Peruzzini, M
  • Heun, S
  • Botton, Gianluigi
  • Szkopek, T

publication date

  • April 23, 2018