Journal article
Luminescence dynamics in Ga(AsBi)
Abstract
The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is …
Authors
Imhof S; Wagner C; Thränhardt A; Chernikov A; Koch M; Köster NS; Chatterjee S; Koch SW; Rubel O; Lu X
Journal
Applied Physics Letters, Vol. 98, No. 16,
Publisher
AIP Publishing
Publication Date
April 18, 2011
DOI
10.1063/1.3580773
ISSN
0003-6951