Low-temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors

Titanium nitride (TiN) thin films were deposited onto Si and InP using the electron cyclotron resonance chemical vapor deposition technique. Tetrakis(dimethylamido)titanium (TDMATi) was used as a precursor. Depositions onto unheated substrates were carried out downstream of a nitrogen plasma. Stoichiometric (Ti:N≊1) and very low resistivity (43 μΩ cm) films were obtained at a deposition rate of 13 Å/min. The carbon and oxygen contaminants in the films were below the detectability limits of Rutherford backscattering and Auger electron spectroscopy. The Auger depth profile shows that the TiN/InP structure is stable for rapid thermal annealing up to 800 °C.

Low-temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors Journal Articles