Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells

A method for quantifying the degree to which the uneven carrier distribution affects the operation of multiple quantum well (MQW) lasers is developed by comparing the net gains of wells in mirror image asymmetric MQW structures. The uneven carrier distribution is found to affect the performance of devices with as few as two quantum wells and decreases the net gain for wells on the n side of a ten quantum well structure by more than a factor of two.