Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces Academic Article uri icon

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authors

  • Bassim, Nabil
  • Twigg, ME
  • Eddy, CR
  • Culbertson, JC
  • Mastro, MA
  • Henry, RL
  • Holm, RT
  • Neudeck, PG
  • Trunek, AJ
  • Powell, JA

publication date

  • January 10, 2005