Clustering effects in Ga(AsBi) Journal Articles uri icon

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abstract

  • The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.

authors

  • Imhof, Sebastian
  • Thränhardt, Angela
  • Chernikov, Alexej
  • Koch, Martin
  • Köster, Niko S
  • Kolata, Kolja
  • Chatterjee, Sangam
  • Koch, Stephan W
  • Lu, Xianfeng
  • Johnson, Shane R
  • Beaton, Dan A
  • Tiedje, Thomas
  • Rubel, Oleg

publication date

  • March 29, 2010