Journal article
Clustering effects in Ga(AsBi)
Abstract
The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.
Authors
Imhof S; Thränhardt A; Chernikov A; Koch M; Köster NS; Kolata K; Chatterjee S; Koch SW; Lu X; Johnson SR
Journal
Applied Physics Letters, Vol. 96, No. 13,
Publisher
AIP Publishing
Publication Date
March 29, 2010
DOI
10.1063/1.3374884
ISSN
0003-6951