Resonant tunneling as a dominant transport mechanism in n-GaAs∕p-GaAs tunnel diodes Journal Articles uri icon

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abstract

  • Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 1019cm−3.

authors

  • Jandieri, K
  • Baranovskii, SD
  • Rubel, Oleg
  • Stolz, W
  • Gebhard, F
  • Guter, W
  • Hermle, M
  • Bett, AW

publication date

  • June 16, 2008