Characterization of the junction capacitance of metal-semiconductor carbon nanotube Schottky contacts

Capacitance-voltage measurements have been performed on individual metal-carbon nanotube (CNT) Schottky diodes. The capacitance is found to agree in general with electrostatic simulations, taking into account the one-dimensional density of states of the CNT, and depends strongly on the Schottky barrier height and the diameter of the nanotube. The results indicate that the capacitance-voltage technique can be extended to characterize electrical junctions with very small area.