Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure

The effects of defect-enhanced, impurity-free, quantum-well (QW)-barrier compositional intermixing caused by the SiO2 cap annealing at 750 °C of a 1.5-μm InGaAsP/InP multiple quantum-well (MQW) laser structure have been studied by photoluminescence (PL). A substantial band-gap blue shift, as much as 112 nm (∼66 meV), was found in the structure and the value of the shift can be controlled by the anneal time. The amount of the shift does not …