InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls

InGaAs/InP layers have been grown under optimized conditions by gas source molecular beam epitaxy on (100) InP substrates patterned with V grooves having (111)A facet sidewalls. Transmission electron microscopy shows that InGaAs/InP quantum wires are obtained with well thickness variation as high as a factor of 6 and that all epilayers are defect-free. Lateral subband separations are estimated by a simple one-dimensional parabolic potential …