Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion

In this work, site-selective Boron (B) doping in SiC nanowires has been demonstrated by utilizing focused femtosecond (fs) laser irradiation. Raman spectra and electrical performance indicate that the localized element doping in pristine n-type SiC nanowires can convert the segment into p-type. The formation of crystalline defects and vacancies in nanowires under fs laser irradiation, along with the simultaneous dissociation of the dopant molecules, can accelerate the doping process. Single SiC nanowire p-n junction and field-effect transistors with a p-type segment have been fabricated based on the pristine n-type nanowire, showing a modified electrical response as a logic gate to programmed voltage signals. This laser controlled selective doping may provide an alternative for precise element doping in semiconductors at the nanoscale, which can be promising for nanoelectronic unit fabrication.

Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion Journal Articles