Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion

In this work, site-selective Boron (B) doping in SiC nanowires has been demonstrated by utilizing focused femtosecond (fs) laser irradiation. Raman spectra and electrical performance indicate that the localized element doping in pristine n-type SiC nanowires can convert the segment into p-type. The formation of crystalline defects and vacancies in nanowires under fs laser irradiation, along with the simultaneous dissociation of the dopant …