Observation of dislocation stresses in InP using polarization-resolved photoluminescence

Localized stresses have been observed on the surface of InP wafers using spatially resolved and polarization-resolved photoluminescence. These stresses have been identified as the stress fields around individual dislocations based on the match in shape and magnitude between calculated and observed stress patterns. This technique provides an accurate, nondestructive method of detecting and characterizing dislocations in InP and other luminescent semiconductors.