Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy

Defects in doped InGaAsN (≈1.5% N) grown by gas source molecular-beam epitaxy are examined through Hall effect measurements. The behavior of the carrier concentration as a function of N content and doping concentration is examined. A Fermi statistics model based upon the experimental results has identified the energy levels and concentrations of three traps in as-grown InGaAsN.