Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy Journal Articles uri icon

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abstract

  • Defects in doped InGaAsN (≈1.5% N) grown by gas source molecular-beam epitaxy are examined through Hall effect measurements. The behavior of the carrier concentration as a function of N content and doping concentration is examined. A Fermi statistics model based upon the experimental results has identified the energy levels and concentrations of three traps in as-grown InGaAsN.

publication date

  • March 19, 2001