Journal article
Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
Abstract
Defects in doped InGaAsN (≈1.5% N) grown by gas source molecular-beam epitaxy are examined through Hall effect measurements. The behavior of the carrier concentration as a function of N content and doping concentration is examined. A Fermi statistics model based upon the experimental results has identified the energy levels and concentrations of three traps in as-grown InGaAsN.
Authors
Fleck A; Robinson BJ; Thompson DA
Journal
Applied Physics Letters, Vol. 78, No. 12, pp. 1694–1696
Publisher
AIP Publishing
Publication Date
March 19, 2001
DOI
10.1063/1.1355011
ISSN
0003-6951