InGaAsP grown by He-plasma-assisted molecular beam epitaxy for 1.55 μm high speed photodetectors

Simple photoconductive optical detectors for 1.55 μm wavelength have been fabricated on InGaAsP grown by He-plasma assisted molecular beam epitaxy. Characterization of the photodetectors shows that their speed is determined by the free carrier trapping time, with a full width at half-maximum impulse response of approximately 6 ps.