All jet-printed polymer thin-film transistor active-matrix backplanes Journal Articles uri icon

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abstract

  • Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128×128 pixel active matrix arrays with 340μm pixel size. The semiconductor used, a regioregular polythiophene, poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene]; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06cm2∕Vs, on/off ratios of 106, and minimal bias stress. The printed TFTs have high yield with a narrow performance distribution. The pixel design benefits from the registration accuracy of jet printing and it is shown that the electrical performance is suitable for addressing capacitive media displays.

authors

  • Arias, AC
  • Ready, SE
  • Lujan, R
  • Wong, WS
  • Paul, KE
  • Salleo, A
  • Chabinyc, ML
  • Apte, R
  • Street, Robert A
  • Wu, Yiliang
  • Liu, P
  • Ong, B

publication date

  • October 11, 2004