Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

We describe how the Bi content of GaAs1−xBix epilayers grown on GaAs can be controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth conditions are required because of the strong tendency for Bi to surface segregate under usual growth conditions for GaAs. A maximum Bi content of 10% is achieved at low substrate temperature and low arsenic pressure, as inferred from x-ray diffraction measurements. A model for bismuth …