Electron transport in InAs-InAlAs core-shell nanowires Journal Articles

abstract

• Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial In0.8Al0.2As shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states.

authors

• Holloway, Gregory W
• Song, Yipu
• Haapamaki, Chris M
• Lapierre, Ray Robert
• Baugh, Jonathan

status

• published 

publication date

• January 28, 2013

has subject area

• 02 Physical Sciences (FoR)
• 09 Engineering (FoR)
• 10 Technology (FoR)
• Applied Physics (Science Metrix)

published in

• Applied Physics Letters  Journal

keywords

• FIELD-EFFECT TRANSISTORS
• MOBILITY
• Physical Sciences
• Physics
• Physics, Applied
• SEMICONDUCTOR NANOWIRE
• STATES
• SURFACE PASSIVATION
• Science & Technology

Digital Object Identifier (DOI)

• 10.1063/1.4788742

volume

• 102

issue

• 4