Low-frequency noise in cadmium-selenide thin-film transistors Journal Articles uri icon

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abstract

  • Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range 10−3<α<2×10−2 for Si TFTs and amorphous Si.

authors

publication date

  • October 2, 2000